Our research focuses on the utilization of nano- and carbon-based materials in a wide range of electronic applications and circuits. Engineered functional nanomaterials like carbon nanotubes, nanowires and other carbon-based materials - like graphene or graphenic carbon materials - have the potential to significantly improve the performance of electronic devices, sensors, interconnects, energy- and information storage devices and circuits based on them. At the same time, nano- and carbon-based materials may offer a route towards a more sustainable form of materials used in engineering - a form which relies less on the precious limited natural resources. Our efforts to create new functional devices bridge classical electrical engineering and circuits with material science and physics.
Lena Zeitlhöfler published a new paper:
Simulation of the Transient Potential Distribution On-Chip During a Fast ESD Event Based on a Parametric Measurement Analysis
ESD events on semiconductor devices in the...
Every day they helped to transport tons of pallets with protective material and disinfectants. In 99 logistics bases operated nationwide, THW stores protective materials and disinfectants temporarily and...
Markus Hefele et al. new paper "Integrated multipurpose analog front-end for electrochemical ISFET sensors" is published:
Ion-Sensitive-Field-Effect-Transistors (ISFETs) are an alternative to the common glass...
for his paper "A CMOS Temperature Stabilized 2-Dimensional Mechanical Stress Sensor with 11-bit Resolution" https://ieeexplore.ieee.org/abstract/document/8778132
Award ceremony will be held during the 2020 VLSI...
EOS/ESD Symposium is the leading conference in the field of electrostatic discharge and electrical overstress. It offers the unique possibility to get a wide scope understanding of the challenges ahead to...
On Monday, June 10, Jon will present:
C6-4 - 15:15
A CMOS Temperature Stabilized 2-Dimensional Mechanical Stress Sensor with 11-bit Resolution,
U. Nurmetov*, T. Fritz**, E. Muellner**, C. Dougherty**, F....