Module number: EI7259

Duration: 1 Semester

Recurrence: Winter semester and summer semester

Language: English

Number of ECTS: 6

Professor in charge: Gerhard Wachutka

Class attendance: 60

Private study: 120

Total: 180

The course work consits of five experiments, the analysis of the collected data and the preparation of a readable test reports for each experiment.

The exam consists of:

- Oral qualification test for each experiment (pass)

- Written exam at the end of the laboratory course (50%)

- Written reports for five experiments (50%)

Electrical and thermal characterization of power semiconductor devices like Power MOSFET, IGBT, PIN-diode.

Following experiments will be available:

- electrical characteristics in a quasi-static mode

- electrical characteristis in a pulsed mode

- gate charge curve

- avalanche ruggedness (UIS)

- thermal safe operating area

- switching behavioour (double-pulse method)

- thermal resistance of materials

- transient thermal resistance of MOSFET-devices

At the end of the module students are able to:

- understand circuits for the characterization of power semiconductor devices

- build-up tes equipement to perform experiments

- understand and operate measurement instruments

- use commercial software to control measurements

- read and understand power semiconductor data sheets and application notes

- perform measurements

- evaluate and interpret measurements date

- write test reports

- understand properties and behaviour of power semiconductor devices

- implement saftey procedures

Basic knowledge of power semiconductor devices

Module: power electronics

Content of the manual

- Manual

- Measurements software

- Power Semiconductor, Stefan Linder, PFL Press, 2006

- Semiconductor Power Devices, Josef Lutz et al., Springer 2011

- Power Semiconductors manufacturer different Data Sheets and Application Notes

- Hands- on, individual experiments

- two person teams supervised by an instructor

- self-contained work